Formation of free-standing graphene oxide films used as photodetectors by femtosecond irradiation allows modifying sensitive channel with high precision, without damaging the film. However, graphene channel formation is a task that requires new non-standard solutions. In this work, photovoltaic effect in a free-standing graphene oxide film is considered. It was demonstrated that free-standing graphene oxide films formed by femtosecond irradiation make it possible to avoid the effect of charges on substrate on conductive graphene channel. The control of the formation of a reduced graphene oxide channel was experimentally studied. It was found that the structure is a film layer of graphene oxide deposited from solution on a polydimethylsiloxane substrate with a hole for the free-standing part of the film. The obtained samples were studied using scanning electron microscopy and Raman spectroscopy. It has been established that in these microstructures it is possible to form a given level of photoresponse, depending on the structure restoration degree. Photosensitivity in structures with free-standing graphene oxide is determined by the transitions of the reduced and unreduced regions of the channel and is 0.8 A/W for a wavelength of 630 nm. The device has shown high photosensitivity in the near visible infrared region.
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Key words:
photosensitive elements, two-dimensional materials, graphene, conductivity control, two-dimensional channel
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Published in:
Technological processes and routes
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Bibliography link:
Nekrasov N. P., Murashko D. T., Vasilevsky P. N., Gerasimenko A. Yu., Nevolin V. K., Bobrinetskiy I. I. Laser formation of suspended graphene channels for photosensitive detectors. Proc. Univ. Electronics, 2024, vol. 29, no. 4, pp. 447–455. https://doi.org/10.24151/1561-5405-2024-29-4-447-455
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Financial source:
The work has been supported by the Russian Science Foundation (grant no. 19-19-00401-P), https://rscf.ru/project/19-19-00401/
Nikita P. Nekrasov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Denis T. Murashko
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Pavel N. Vasilevsky
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Alexander Yu. Gerasimenko
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Vladimir K. Nevolin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Ivan I. Bobrinetskiy
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
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